▎ 摘　　要

NOVELTY - A graphene-based heterojunction field effect transistor comprises a substrate, gate electrode, dielectric layer, graphene layer, a source electrode, a drain electrode and an oxide semiconductor layer provided between the graphene layer and electrodes. USE - Graphene-based heterojunction field effect transistor for integrated circuit (claimed) used in logic and radio frequency applications. ADVANTAGE - The field effect transistor has high mobility, saturated output characteristics, and is manufactured by a simple process suitable for large-scale production. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the graphene-based heterojunction field effect transistor.