• 专利标题:   Detecting opaque photoelectric pole Fermi level, involves preparing an electrode to be tested of a graphene probe, comparing relation curve and the reference curve to obtain original position Fermi level of electrode, and providing electrode with first electrode and second electrode.
  • 专利号:   CN113686833-A
  • 发明人:   LV D, LI C, WANG Y
  • 专利权人:   CHINA ELECTRONIC TECHNOLOGY GROUP CORP N
  • 国际专利分类:   G01N021/65, G01N027/30, G01N027/36
  • 专利详细信息:   CN113686833-A 23 Nov 2021 G01N-021/65 202234 Chinese
  • 申请详细信息:   CN113686833-A CN11021870 01 Sep 2021
  • 优先权号:   CN11021870

▎ 摘  要

NOVELTY - The method involves preparing an electrode to be tested of a graphene probe. A graphene probe control electrode is prepared. An in-situ electrochemical Raman device is constructed. An original position Raman spectrum of the electrode of the graphene probe is tested. A relation curve is obtained between a peak wave number and an external electric potential when the electrode is controlled by the graphene probes. The relation curve and the reference curve are compared to obtain an original position Fermi level of an electrode. The electrode is provided with a first electrode and a second electrode. USE - The method is useful for detecting opaque photoelectric pole Fermi level. ADVANTAGE - The method can directly measure the photoelectric pole Fermi level which is not easy to measure, which is good for further optimizing the material of the light electrode. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a non-transparent photoelectric pole Fermi level detecting system. DESCRIPTION OF DRAWING(S) - The drawing shows a detection schematic diagram of method for detecting opaque photoelectric pole Fermi level (Drawing includes non-English language text).