▎ 摘　　要

NOVELTY - Synthesizing a graphene nanoribbon, comprises: providing linearly conjugated aryl compounds (I); and polycyclization of (I) to provide a graphene nanoribbon precursor. USE - The process is useful for synthesizing graphene nanoribbon, which is useful: in a transistor, which is field effect transistor, bipolar junction transistor, diffusion transistor, unijunction transistor, single electron transistor, nanofluidic transistor, tetrode transistor, pentode transistor, trigate transistor, junctionless nanowire transistor or vacuum channel transistor; in organic thin film transistors (all claimed); as semiconductors for organic thin film transistors ultra light weight materials reinforcement; for graphene nanoribbon-reinforced materials including watercrafts, rowing shells, bicycles, motorcycles, automobiles, aircraft and spacecraft where a high strength to weight ratio and very good rigidity are important; in small consumer goods comprising consumer electronics, tripods, fishing rods, hockey sticks, paintball equipment, archery equipment, tent poles, racquet frames, stringed instrument bodies, drum shells, golf clubs, helmets, pool cues or other sporting goods; and in reinforcing concrete structures as pre-stressing materials and as chemically resistant coatings. (XII) is used: as conductors and semiconductors in miniaturized devices comprising microelectromechanical systems and nanoelectromechanical systems; and used in transistors, which are useful as sensing elements in sensor devices including gas sensors. ADVANTAGE - The process provides graphene nanoribbon, which has carrier mobility of 1-500 cm2/V.s (claimed). DETAILED DESCRIPTION - Synthesizing a graphene nanoribbon, comprises: providing linearly conjugated aryl compound of formula (I); and polycyclization of (I) to provide a graphene nanoribbon precursor. n = 1-100000; R1-R4 = H or -CC-R7; and R5-R7 = H, alkyl, aryl or trimethylsilyl. INDEPENDENT CLAIMS are also included for: (1) synthesizing graphene nanoribbon having zigzag backbone, comprising providing zigzag conjugated aryl compound of formula (VIII) and polycyclizing (VIII) to provide graphene nanoribbon precursor; (2) polyfused cyclic compounds of formula (XII); (3) a transistor comprising (XII); (4) polyfused cyclic compounds of formula (XIII); (5) a transistor comprising (XIII); (6) organic thin film transistor (D1) comprising a substrate, a gate electrode, a source electrode and a drain electrode, an insulator layer and organic semiconductor layer which is provided on the substrate, a source drain cover controllable by applying voltage to the gate electrode, where the organic thin film transistor performs on-off operation and the semiconductor layer comprises (XIII); (7) an apparatus comprising the organic thin film transistor (D1); (8) an organic thin film transistor (E1) comprising a substrate, a gate electrode, a source electrode and drain electrode, an insulator layer and an organic semiconductor layer provided on the substrate, a source drain cover controllable by applying voltage by the gate electrode, where the organic thin film transistor performs on-off operation and the semiconductor layer comprises polyfused cyclic compounds of formula (XIV); and (9) an apparatus comprising the organic thin film transistor (E1). R31, R33 = H, F, Cl, Br, I, lithium, trifluoromethanesulfonate, mesylate, tosylate, bismuth, boronic acid, boronic ester, boronate ester, organoborane, organotrifluoroborate, magnesium halide, stannane, silicon trihalide, organosilane, acetyloxy or zinc halide; R32 = H, trimethylsilyl, tert-butyldimethylsilyl, tert-butyldiphenylsilyl, triethylsilyl, triisopropylsilyl, alkyl, phenyl, furanyl, thiophenyl, pyridyl or poly (meta-phenylene) comprising 2-20 meta phenylene units; R34-R37 = aldehyde or acetal; o = 5-100000; m = 0-20; R = H (preferred), halo, 1-30C alkyl, 1-30C haloalkyl, 1-30C alkoxy, 1-30C haloalkoxy, 1-30C alkylthio, 1-30C haloalkylthio, 1-30C alkylamino or 2-60C dialkylamino, where the alkyl groups may be combined with each other to form ring structure containing N, 1-30C alkylsulfonyl, 1-30C haloalkylsulfonyl, 6-60C aromatic hydrocarbon, 3-60C aromatic heterocyclic, 3-20C alkylsilyl, 5-60C alkylsilylacetylene or CN; and p = 0-100000.