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  • 专利标题:   Graphene pattern formation method involves forming DNA pattern, and forming graphene pattern on DNA pattern.
  • 专利号:   KR2014141542-A, KR1473854-B1
  • 发明人:   JEONG S, LEE J, PARK I K, PARK J H, PARK S, ROH Y, YEON S
  • 专利权人:   UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   B82B003/00, C01B031/04, C23C016/18
  • 专利详细信息:   KR2014141542-A 10 Dec 2014 C01B-031/04 201503 Pages: 30
  • 申请详细信息:   KR2014141542-A KR139697 16 Oct 2014
  • 优先权号:   KR075840

▎ 摘　　要

NOVELTY - Graphene pattern formation method involves forming DNA pattern, and forming graphene pattern on the DNA pattern, where the DNA pattern comprises metal particle and the graphene pattern is formed on the metal particle. USE - Graphene pattern formation method (claimed).