▎ 摘　　要

NOVELTY - The apparatus has a joule heating apparatus for performing Joule heating of metal base materials (105) for graphene film formation installed in processing container (110) to a plasma generation apparatus which generates plasma in processing container. A vapor scattering prevention apparatus (112) covers metal base materials in order to prevent scattering into the vapor processing container which is heated by Joule heating and evaporates from the metal base materials. The metal base materials for graphene film formation are copper base materials. USE - Manufacturing apparatus of graphene film for transparent conductive film for transparent electrode, electrochemical electrode, biodevice, touchscreen, transistor, and integrated circuit or electronic device. ADVANTAGE - The ion bombardment from plasma is prevented. The crystallinity of graphene is improved at low temperature in short time. The generation of the radiation damage by the ion bombardment to graphene during formation of graphene using a plasma is prevented. The impairment effect of the plasma processing is reduced by stability of the plasma by metal adhesion in the plasma generator by evaporation of the metal base materials heated by high temperature. Since control of heating temperature is easy, electroheating is performed effectively. DETAILED DESCRIPTION - An opening for reactive-gas introduction is provided in vapor scattering prevention apparatus. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the manufacturing apparatus of graphene film. (Drawing includes non-English language text) Plasma generation chamber (101) Antenna (102) Metal base material (105) Processing container (110) Vapor scattering prevention apparatus (112)