▎ 摘　　要

NOVELTY - An electrothermal radiation light-emitting array device comprises a silicon wafer, a graphene film array on a silicon wafer, a metal electrode deposited at each end of each graphene film in the graphene film array and an uppermost layer of aluminum oxide insulating layer deposited on the outermost layer of the entire silicon wafer to cover the graphene film array, the metal electrode, and the graphene film array and the silicon outside the metal electrode region region, where the aluminum oxide insulating layer is used to insulate the graphene film on the silicon wafer from the air to prevent the graphene film from being oxidized. USE - Electrothermal radiation light-emitting array device is used as a high speed and ultra-small light source on a silicon chip and for use in infrared target imaging (all claimed). ADVANTAGE - The device has small volume, high resolution, fast switching speed, adjustable radiation wavelength, large-scale production and easy integration with silicon-based processes. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method of fabricating an electrothermal radiation light-emitting array device, which involves depositing an aluminum oxide insulating layer on the surface of the entire silicon wafer containing a graphene film array and a metal electrode on the surface by electron beam evaporation that the surface of the entire silicon wafer provided with a graphene film array and a metal electrode on the surface is thermally evaporated by 1 nm thick aluminum atoms as a precursor, oxidizing the obtained sample in air for 5-10 minutes to obtain a thin layer of aluminum oxide, depositing a layer of aluminum oxide on the surface of the sample obtained by atomic layer deposition at 450 degrees C, charging the trimethyl aluminum in a gas phase manner and adsorbing the trimethyl aluminum molecule on the surface of the sample to achieve adsorption saturation, filling the sample with high-purity nitrogen and blown cleaning the excess trimethylaluminum molecules, charging the water in the form of water vapor to chemically react with the trimethylaluminum molecules adsorbed on the surface of the sample to form a stable solid film of alumina and repeating the charging process and controlling the thickness of the aluminum oxide layer by the number of cycles to obtain an aluminum oxide insulating layer on the surface of the graphene film array device.