▎ 摘　　要

NOVELTY - The method involves generating photo-generated carriers by a silicon layer (3) i.e. N-type high resistivity by using optical pumping technology. The photo-generated carriers is diffused into a graphene layer (1) i.e. p-type doped graphene. A depletion layer (2) is formed at an interface, where the interface is fixed between the silicon layer and the graphene layer. Fermi level of the graphene layer is switched into a conduction band. Reverse bias is applied between a substrate and the silicon layer. The silicon layer is formed on the graphene layer and the depletion layer, where light absorbance of the graphene layer is about 2% to 4 %. USE - Silicon-based graphene optical pumping electric control terahertz wave controlling method. ADVANTAGE - The method enables reducing insertion loss and large unit crosstalk problem, and increasing modulation depth, and accelerating response speed. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a substrate. Graphene layer (1) Depletion layer (2) Silicon layer (3)