• 专利标题:   Transparent double-waveband based on graphene/p-GaN/AlGaN heterojunction of UV detector of variable working model for use in e.g. field of national defense, has surface circular ring formed with upper electrode, where ring surface of graphene is arranged with upper electrode lead metal layer.
  • 专利号:   CN115172473-A
  • 发明人:   KONG J, TAN Y, WEI H, WANG J, HUANG S, YUAN S, CAI Y, HAO Q, DENG G, TANG L, WU G
  • 专利权人:   KUNMING PHYSICS INST
  • 国际专利分类:   H01L031/0216, H01L031/0224, H01L031/101, H01L031/105, H01L031/108, H01L031/18
  • 专利详细信息:   CN115172473-A 11 Oct 2022 H01L-031/0216 202294 Chinese
  • 申请详细信息:   CN115172473-A CN10592121 28 May 2022
  • 优先权号:   CN10592121

▎ 摘  要

NOVELTY - The band has a mesa structure whose lower part is arranged with an aluminum oxide material, which is a multi-layer metal electrode. An upper part of the mesa structure is arranged with a p-GallN material that is an annular SiOx/SiNx passivation layer. A graphene is covered on a surface of the p-GaN material. A surface circular ring is formed with an upper electrode. The circular ring surface of the graphene is arranged with an upper electrode lead metal layer. USE - Transparent double-waveband based on graphene/p-GaN/AlGaN heterojunction of a UV detector of a variable working model for use in a field of national defense and civil use of early warning of fire. ADVANTAGE - The detector can work at the positive and back irradiation model blind and visible blind dual-band detection, and the working mode can be applied on the detector bias voltage change from the light guide to the photovoltaic detector of the new ultraviolet wave band switching of the photoelectric model when the detector detects the blind wave band, the bias voltage is negative. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation method of the transparent double-band based on graphene/p-GaN/AlGaN heterojunction. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of the transparent double-waveband based on graphene/p-GaN/AlGaN heterojunction of a UV detector of a variable working model.