• 专利标题:   Semiconductor device comprises transistor doping region of vertical transistor structure, graphene layer portion adjacent to portion of transistor doping region and transistor wiring structure adjacent to graphene layer portion.
  • 专利号:   DE102016124973-A1, US2018175153-A1
  • 发明人:   SCHULZE H, RUPP R, RUHL G
  • 专利权人:   INFINEON TECHNOLOGIES AG, INFINEON TECHNOLOGIES AG
  • 国际专利分类:   H01L029/43, H01L029/78, H01L021/28, H01L021/336, C01B032/182, H01L029/45, H01L029/16, H01L029/417, H01L029/66
  • 专利详细信息:   DE102016124973-A1 21 Jun 2018 H01L-029/43 201845 Pages: 15 German
  • 申请详细信息:   DE102016124973-A1 DE10124973 20 Dec 2016
  • 优先权号:   DE10124973

▎ 摘  要

NOVELTY - Semiconductor device (100) comprises: a transistor doping region (110) of a vertical transistor structure arranged in a semiconductor substrate (120); a graphene layer portion (130) located adjacent to at least a portion of the transistor doping region at a surface of the semiconductor substrate; and a transistor wiring structure (140) located adjacent to the graphene layer portion. USE - Used as semiconductor device. ADVANTAGE - The semiconductor device exhibits high latch-up strength. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for forming a semiconductor device, comprising forming a transistor doping region of a vertical transistor structure in a semiconductor substrate, forming a graphene layer portion located adjacent to at least a portion of the transistor doping region at a surface of the semiconductor substrate, and forming a transistor wiring structure located adjacent to the graphene layer portion. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross sectional view of a part of semiconductor device. Semiconductor device (100) Transistor doping region (110) Semiconductor substrate (120) Graphene layer portion (130) Transistor wiring structure (140)