▎ 摘　　要

NOVELTY - Semiconductor device (100) comprises: a transistor doping region (110) of a vertical transistor structure arranged in a semiconductor substrate (120); a graphene layer portion (130) located adjacent to at least a portion of the transistor doping region at a surface of the semiconductor substrate; and a transistor wiring structure (140) located adjacent to the graphene layer portion. USE - Used as semiconductor device. ADVANTAGE - The semiconductor device exhibits high latch-up strength. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for forming a semiconductor device, comprising forming a transistor doping region of a vertical transistor structure in a semiconductor substrate, forming a graphene layer portion located adjacent to at least a portion of the transistor doping region at a surface of the semiconductor substrate, and forming a transistor wiring structure located adjacent to the graphene layer portion. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross sectional view of a part of semiconductor device. Semiconductor device (100) Transistor doping region (110) Semiconductor substrate (120) Graphene layer portion (130) Transistor wiring structure (140)