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  • 专利标题:   Forming graphene pattern, comprises forming fine pattern defined by trench on substrate, providing graphene solution on fine pattern, and selectively forming graphene layer on fine pattern contacting graphene solution.
  • 专利号:   US2014178598-A1, KR2014082439-A
  • 发明人:   CHUNG K H, KIM J T, YU Y, CHOI J S, YOUN D H, KIM K, CHOI C G, YU Y J, KIM K C
  • 专利权人:   CHUNG K H, KIM J T, YU Y, CHOI J S, YOUN D H, KIM K, CHOI C G, ELECTRONICS TELECOM RES INST
  • 国际专利分类:   B05D007/24, H01B013/00, H01B005/14
  • 专利详细信息:   US2014178598-A1 26 Jun 2014 B05D-007/24 201452 Pages: 14 English
  • 申请详细信息:   US2014178598-A1 US916404 12 Jun 2013
  • 优先权号:   KR152407

▎ 摘　　要

NOVELTY - Forming a graphene pattern comprises: forming a fine pattern (12) defined by at least one trench (14) on a substrate (10); providing a graphene solution (20) on the fine pattern; and selectively forming a graphene layer (30) on the fine pattern contacting the graphene solution. USE - The method is useful for forming a graphene pattern. ADVANTAGE - The method provides graphene pattern which is capable of increasing productivity. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of the method for forming a graphene pattern. Substrate (10) Fine patterns (12) Trenches (14) Graphene solution (20) Graphene layer (30)