▎ 摘　　要

NOVELTY - Preparation of silicon-substrate patterned graphene involves heteroepitaxially-growing silicon carbide thin film on silicon substrate, performing plasma-enhanced chemical vapor deposition, coating obtained silica mask with photoresist layer, carving the mask, passing argon gas-carrying carbon tetrachloride steam into quartz tube having to-be-patterned film, placing formed carbon film in hydrofluoric acid buffer solution, depositing nickel film on carbon film, annealing and placing patterned graphene in hydrochloric acid and copper sulfate mixed solution to remove nickel film. USE - Preparation of silicon-substrate patterned graphene (claimed). ADVANTAGE - The patterned graphene has favorable electron mobility. DETAILED DESCRIPTION - Preparation of silicon-substrate patterned graphene involves performing standard cleaning of 4-12 inches silicon substrate, placing cleaned substrate into chemical vapor deposition system reaction chamber under reaction chamber vacuum of 10-7 mbar, protecting under hydrogen gas, gradually raising temperature of reaction chamber to 1000-1200 degrees C, passing propane with flow rate of 35 ml/minute, performing carbonization of substrate for 4-8 minutes, growing carbon layer, heating at 1200-1350 degrees C, passing propane and silane, heteroepitaxially-growing silicon carbide thin film (3C-SiC) for 30-60 minutes, then gradually reducing temperature to room temperature under protection of hydrogen, performing plasma-enhanced chemical vapor deposition on silicon carbide thin film surface to deposit silica layer having thickness of 0.4-1.2 mu m as mask, coating surface of silica mask with photoresist layer, carving the mask into desired shape based on shape of substrate to expose silicon carbide thin film, placing to-be-patterned product in quartz tubes, connecting, heating quartz tubes at 800-1000 degrees C, heating three-neck bottle with carbon tetrachloride liquid at 60-80 degrees C with argon flow rate of 40-80 ml/minute, passing argon gas-carrying carbon tetrachloride steam into the quartz tube, reacting carbon tetrachloride and silicon carbide thin film for 30-120 minutes to produce carbon film, placing formed carbon film in hydrofluoric acid buffer solution to remove pattern other than silica, depositing nickel film having thickness of 300-500 nm on the carbon film using electron beam with argon flow rate of 20-100 ml/minute, annealing at 900-1100 degrees C for 15-25 minutes to obtain patterned graphene in pattern position on the carbon film, and placing patterned graphene in mixed solution of hydrochloric acid and copper sulfate to remove nickel film, to obtain patterned graphene material.