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  • 专利标题:   Graphene oxide doped material for electrode of pixel structure in display device, has hetero material part formed with graphite layer and hetero layer, where graphite layer is formed with mixing layer and hetero layer.
  • 专利号:   CN104538438-A, US2016197101-A1
  • 发明人:   BAI F, LIU J, YANG J
  • 专利权人:   BEIJING BOE OPTOELECTRONIC CO LTD, BOE TECHNOLOGY GROUP CO LTD, BEIJING BOE OPTOELECTRONICS TECHNOLOGY
  • 国际专利分类:   H01B001/04, H01L021/285, H01L029/43, C23C014/24, C23C016/26, H01L027/12
  • 专利详细信息:   CN104538438-A 22 Apr 2015 H01L-029/43 201546 Pages: 10 Chinese
  • 申请详细信息:   CN104538438-A CN10005751 06 Jan 2015
  • 优先权号:   CN10005751

▎ 摘　　要

NOVELTY - The material has a hetero material part formed with a graphite layer and a hetero layer that is made of one of barium fluoride (BaF2), magnesium fluoride (MgF2) and iron chloride (FeCl2). Thickness of the graphite layer is 6-35 nm. The graphite layer is formed with a mixing layer and the hetero layer. USE - Graphene oxide doped material for an electrode of a pixel structure in a display device (claimed). ADVANTAGE - The material increases transmission rate of a carrier, has low resistance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene oxide doped material preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene oxide doped material.