1. 平台首页
  2. 国际专利信息
  • 专利标题:   Low-temperature growth of graphene comprises performing atomic-layer deposition, using remote plasma as another source of PEALD and copper foil as substrate, clearing and reducing substrate surface, and removing dirt and oxide layer.
  • 专利号:   CN103121670-A, CN103121670-B
  • 发明人:   REN W, SHI P, ZHANG Y, WU X
  • 专利权人:   UNIV XIAN JIAOTONG
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN103121670-A 29 May 2013 C01B-031/04 201377 Chinese
  • 申请详细信息:   CN103121670-A CN10053286 19 Feb 2013
  • 优先权号:   CN10053286

▎ 摘　　要

NOVELTY - Low-temperature growth of graphene comprises performing atomic-layer deposition using plasma-enhanced atomic-layer deposition (PEALD) apparatus and benzene liquid as C source for graphene growth, carrying out low-temperature growth of graphene using remote plasma as another source of PEALD and copper (Cu) foil as substrate, clearing and reducing surface of Cu substrate by adopting 3 kW large-power hydrogen/argon (H2/Ar) plasma, and removing dirt and oxide layer from surface of Cu substrate. USE - Method for low-temperature growth of graphene (claimed). ADVANTAGE - The method can accurately control thickness of graphene, and produces higher graphene crystallinity and purity.