• 专利标题:   Polypropylene thermoplastic semiconductive shielding material comprises polypropylene resin, modified resin, carbon black, anti-adhesive and antioxidant.
  • 专利号:   CN114213798-A
  • 发明人:   XU Y, QI J, XU X, TANG Y, HUAI B
  • 专利权人:   SHANGHAI XINSHANGHUA POLYMER MATERIAL CO
  • 国际专利分类:   C08K003/04, C08K005/20, C08L023/00, C08L023/06, C08L023/08, C08L023/12, C08L053/00, C08L083/07
  • 专利详细信息:   CN114213798-A 22 Mar 2022 C08L-053/00 202255 Chinese
  • 申请详细信息:   CN114213798-A CN11611523 27 Dec 2021
  • 优先权号:   CN11611523

▎ 摘  要

NOVELTY - Polypropylene thermoplastic semiconductive shielding material comprises 100 pts. wt. polypropylene resin, 10-30 pts. wt. modified resin, 20-40 pts. wt. carbon black, 3-10 pts. wt. anti-adhesive and 1-3 pts. wt. antioxidant. USE - Polypropylene thermoplastic semiconductive shielding material. ADVANTAGE - Polypropylene thermoplastic semiconductive shielding compound ensures that the material has excellent heat resistance and low temperature resistance by adjusting the weight and the proportion of the polypropylene, excellent conductivity of the material is ensured by adjusting the type and the proportion of the carbon black. Meanwhile, material has thermoplasticity and peelability, and replace the existing cross-linking type power cable shielding material. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation method of polypropylene thermoplastic semiconductive shielding material, which involves: i. adding block polypropylene and random polypropylene in proportion to the reaction kettle of 200 degrees, stirring at a uniform speed for 20 minutes, to uniform mixing, and then reducing the temperature of the reaction kettle to 180 degrees; ii. adding graphite powder into the concentrated sulfuric acid solution of 70-80% and carrying out oxidation, and the time is 10-50 minutes; then taking out the graphene after oxidation and adding it into the sodium chloride solution of 1-3% concentration and washing with water, washing with water, time is 20-40 minutes; after taking out, adding it into an oven at 70-80 degreesC for drying, and drying time is 60-90 minutes, finally, adding it into an ultrasonic device for peeling, and ensuring that the number of graphene layers is 10-15 layers after peeling; iii. adding multi-layer graphene, conductive carbon black, anti-adhesive and antioxidant in (2) into agitator and mixing, and the mixing time is 10 minutes, and mixed material A is made; and iv. adding mixed material A into the reactor in (1), mixing time is 20-30 minutes, then pouring the mixture into a twin-screw extruder for granulation, temperature of the twin-screw extruder is 120-190 degreesC.