▎ 摘　　要

NOVELTY - Chromium metal etching solution comprises 10-20 wt.% ceric ammonium nitrate, 7-8 wt.% hydrogen peroxide (35%), 2-5 wt.% oxalic acid, 0.1-1 wt.% dodecyldimethylbenzylammonium chloride, 3-5 wt.% auxiliary agent, and deionized water (remaining amount). The auxiliary agent is prepared by ultrasonically dispersing graphene oxide in deionization water, adding nano zero-valent iron and hexadecyltrimethylammonium bromide, reacting at 50-50℃, adding formic acid to adjust the pH to 4-5, adding mixed solution composed of anhydrous ethanol and coupling agent KH-590, stirring and heat preservation reaction for 6-8 hours to obtain an intermediate product, mixing the intermediate product with allyl complexing agent, benzoin dimethyl ether and thiol, stirring and placing in 300 W ultraviolet lamp for 30-40 minutes to obtain the auxiliary agent. USE - The chromium metal etching solution is useful for integrated circuit (claimed). ADVANTAGE - The chromium metal etching solution has high dispersibility in the etching solution and high adsorption effect; is capable of trapping the free metal ion in the liquid; reduces the influence of the metal ion on the liquid; maintains the liquid freshness, and improves the service life of the liquid while reducing the waste liquid pollution. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing chromium metal etching liquid for integrated circuit.