• 专利标题:   Manufacture of graphene involves forming substrate, growing silica layer on substrate, growing crystalline phase silicon carbide film on silica layer, depositing nickel layer, heat-treating substrate and cooling substrate.
  • 专利号:   KR2014010320-A, KR1383295-B1
  • 发明人:   CHUNG G S
  • 专利权人:   UNIV ULSAN FOUND IND COOP
  • 国际专利分类:   C01B031/02, C01B031/36, C23C016/06
  • 专利详细信息:   KR2014010320-A 24 Jan 2014 C01B-031/02 201414 Pages: 14
  • 申请详细信息:   KR2014010320-A KR077479 16 Jul 2012
  • 优先权号:   KR077479

▎ 摘  要

NOVELTY - Manufacture of graphene involves forming a substrate, growing silica layer on substrate, growing crystalline phase silicon carbide (3C-SiC) film on silica layer, depositing nickel layer, heat-treating the substrate and cooling the substrate. USE - Manufacture of graphene (claimed). ADVANTAGE - The graphene is manufactured efficiently, by simple method.