▎ 摘　　要

NOVELTY - Growing graphene directly on an insulating substrate using copper particles as catalyst comprises (i) taking substrate cleaning, and carrying out annealing treatment, (ii) taking substrate and adding into acetic acid copper solution for 1-60 minutes, taking out drying, using acetic acid copper solution uniformly coated on substrate, (iii) using acetic acid with copper substrate and adding into tube-type furnace center, through chemical gas phase deposition method, using copper acetate high temperature decomposing. USE - The method is useful for photovoltaic, and electric conduction fields. DETAILED DESCRIPTION - Growing graphene directly on an insulating substrate using copper particles as catalyst comprises (i) taking substrate cleaning, and carrying out annealing treatment, (ii) taking substrate and adding into acetic acid copper solution for 1-60 minutes, taking out drying, using acetic acid copper solution uniformly coated on substrate, (iii) using acetic acid with copper substrate and adding into tube-type furnace center, through chemical gas phase deposition method, using copper acetate high temperature decomposing and generating copper particle catalyze auxiliary carbon source decomposing and growing graphene on substrate in the prepared graphene complex material, where the substrate is silicon dioxide, aluminum oxide, aluminum nitride, magnesium oxide, zirconium oxide, boron carbide or silicon carbide, cleaning, using ethyl alcohol and acetone solvent, through ultrasonic wave each wash for 30 minutes, substrate annealing temperature is at 800-1200 degrees C, the annealing time is 10-60 minutes, the copper acetate solution concentration is 0.001-1 mol/l, the copper acetate solution uniformly coated on substrate of the method for soaking, dipping, and rotary coating or dripping.