• 专利标题:   Preparing transparent conductive film comprises mixing conductive oxide powder, graphene powder and solvent, drying the mixture, then grinding, sintering grinded powder to obtain target material, then sputtering with quartz glass substrate.
  • 专利号:   CN103741094-A, WO2015109684-A1
  • 发明人:   ZHANG L, YANG S, CHEN F, SHEN Q, WU J, JIA Y, SALON J, PEREZ J A G, SCHOENUNG J M
  • 专利权人:   UNIV WUHAN TECHNOLOGY
  • 国际专利分类:   C23C014/06, C23C014/35
  • 专利详细信息:   CN103741094-A 23 Apr 2014 C23C-014/06 201442 Pages: 10 Chinese
  • 申请详细信息:   CN103741094-A CN10028577 22 Jan 2014
  • 优先权号:   CN10028577

▎ 摘  要

NOVELTY - Preparing transparent conductive film comprises adding conductive oxide powder and graphene powder, then mixing into solvent for ultrasonic dispersing, drying the mixture to obtain conductive graphene oxide powder, grinding the powder, sintering the grinded powder in an electric field activated sintering environment to obtain conductive graphene oxide target material, adding the target material and quartz glass substrate into magnetic controlled sputtering chamber, then vacuumizing under pressure of 10-5 Pa, and sputtering the substrate at 100-400 degrees C for 5 minutes. USE - The method is useful for preparing transparent conductive film (claimed). ADVANTAGE - The method is capable of preparing the transparent conductive film with high density and high visible light transmittance and improved conductivity. DETAILED DESCRIPTION - Preparing transparent conductive film comprises adding conductive oxide powder and graphene powder in a mass ratio of 0.05-2:98-99.5, then mixing into a solvent for ultrasonic dispersing, drying the mixture to obtain conductive graphene oxide powder, grinding the conductive graphene oxide powder, sintering the grinded powder in an electric field activated sintering environment to obtain a conductive graphene oxide target material, adding the conductive graphene oxide target and quartz glass substrate into a magnetic controlled sputtering chamber, then vacuumizing under a pressure of 10-5 Pa, pre-sputtering the substrate for 5 minutes, heating the substrate at 100-400 degrees C, filling the sputtering chamber by oxygen and argon gas with a flow quantity ratio of 1:3, regulating inner cavity sputtering pressure and power of the chamber to 1-8 Pa and 10-40 W, respectively, and then sputtering for 10-60 minutes.