▎ 摘　　要

NOVELTY - Forming a reduced graphene oxide thin film, comprises (a) ultrasonically and uniformly dispersing graphene oxide solution, coating the solution on an electric conductive indium tin oxide glass substrate using a spin coater, and then drying at a temperature of 58-62 degrees C for 4-6 minutes to obtain a graphene oxide film, and (b) placing the substrate with graphene oxide film in a plasma discharge chamber, and regulating the parameters of the plasma discharge chamber to generate hydrogen and argon plasma mix that directly acts on the surface of the film. USE - The method is useful for forming reduced graphene oxide thin film (claimed). ADVANTAGE - The method is capable of rapidly and eco-friendly forming the reduced graphene oxide thin film with improved electrochemical properties and without any impurities. DETAILED DESCRIPTION - Forming a reduced graphene oxide thin film, comprises (a) ultrasonically and uniformly dispersing graphene oxide solution, coating the solution on an electrically conductive indium tin oxide glass substrate using a spin coater at a speed of 2950-3050 revolution per minutes (rpm) for 88-92 seconds, and then drying at 58-62 degrees C for 4-6 minutes to obtain a graphene oxide film, and (b) placing the substrate with graphene oxide film in a plasma discharge chamber, and regulating the parameters of the plasma discharge chamber to generate hydrogen and argon plasma mix that directly acts on the surface of the film to obtain a reduced graphene oxide thin film.