▎ 摘　　要

NOVELTY - Passivation of graphene coating on zirconium alloy surface, involves immersing zirconium alloy in nitric acid and hydrofluoric acid mixture, oscillating, removing surface impurities and oil, drying, placing dried zirconium alloy in a reaction chamber of a microwave plasma chemical vapor deposition apparatus, introducing hydrogen, performing hydrogen plasma bombardment zirconium alloy, cooling, placing obtained sample in a reaction chamber of an atomic layer deposition apparatus, depositing silicon carbide passivated particles, and passivating metal surface defects of graphene. USE - Passivation of graphene coating on zirconium alloy surface (claimed). ADVANTAGE - The graphene coating on zirconium alloy surface is economically passivated, by simple process, and has excellent film protection performance. DETAILED DESCRIPTION - Passivation of graphene coating on zirconium alloy surface, involves washing zirconium alloy with acetone, immersing washed zirconium alloy in nitric acid and hydrofluoric acid mixture, ultrasonically oscillating in anhydrous ethanol 2 times, removing surface impurities and oil, drying in a nitrogen atmosphere, placing dried zirconium alloy in a reaction chamber of a microwave plasma chemical vapor deposition apparatus, evacuating the reaction chamber to less than 1 Pa, introducing 50-200 sccm hydrogen, adjusting microwave power to 1000-6000 W, maintaining chamber pressure at 2-9 kPa, performing hydrogen plasma bombardment zirconium alloy for 10-180 minutes, heating the substrate, removing impurities from the surface, introducing methane, adjusting proportion of methane gas, depositing graphene film at 300-600 degrees C for 10-120 seconds with methane/hydrogen flow rate of 1/60, 1/80, 1/100, 1/200 or 1/300, cavity air pressure of 2.7-7.4 kPa and microwave power of 1300-6000 W, continuously introducing hydrogen, cooling the chamber at rate of 2-3 degrees C/second to less than 100 degrees C, removing the sample, placing the obtained sample in a reaction chamber of an atomic layer deposition apparatus, depositing silicon carbide passivated particles, and passivating metal surface defects of graphene. The silicon carbide passivated particles are deposited by introducing argon or nitrogen into the reaction chamber of atomic layer deposition apparatus, introducing carbonaceous material, such that the surface of the sample is adsorbed with carbon, and introducing silicon-containing substance, such that silicon atoms in the silicon-containing material form carbon-silicon bonds with the carbon atoms on the surface of the sample.