• 专利标题:   Preparing three-dimensional vertical graphene comprises using hydrogen and hydrocarbons as raw materials, oxygen as etching gas, and chemical vapor deposition.
  • 专利号:   CN112047327-A
  • 发明人:   WANG M, HAN J, MA Y, CHEN X, XIAO L, JIA S
  • 专利权人:   UNIV SHANXI
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN112047327-A 08 Dec 2020 C01B-032/186 202004 Pages: 7 Chinese
  • 申请详细信息:   CN112047327-A CN10852527 21 Aug 2020
  • 优先权号:   CN10852527

▎ 摘  要

NOVELTY - Preparing three-dimensional vertical graphene comprises using hydrogen and hydrocarbons as raw materials, oxygen as etching gas, and chemical vapor deposition to obtain target height three-dimensional vertical graphene. USE - The method is useful for preparing three-dimensional vertical graphene. ADVANTAGE - The method: provides a cyclic oxygen plasma selective etching technology to trim the top structure of three-dimensional vertical graphene; reduces the intersection of the layers; and maintains the vertical shape of three-dimensional vertical graphene.