▎ 摘　　要

NOVELTY - The structure (100) has a graphene-metal barrier (130) arranged on a substrate (110). The graphene-metal barrier includes graphene layers (131) and metal particles (132) on a grain boundary of each of the graphene layers and between the graphene layers. A conductive layer is formed on the graphene-metal barrier, where the metal particles are formed at a ratio of 1-10 atom % with respect to carbon of the graphene layers. The substrate includes a semiconductor and an insulator. The metal particles include ruthenium, aluminum, titanium, platinum, tantalum, rhodium, iridium, and carbon monoxide. The metal particles are metal carbides bound with carbon of one of the graphene layers between grain boundaries. USE - Interconnect structure for use in an electronic device (claimed). ADVANTAGE - The graphene-metal barrier prevents atomic diffusion and increases adhesion between layers of the interconnect structures. The graphene is formed on the substrate and the interconnect structure is formed in the graphene, so that resistance of the structure is reduced and characteristics of the graphene are prevented from being deteriorated due to diffusion of a material of the substrate and durability is increased while simplifying manufacturing process of an electronic device and reducing manufacturing cost since the manufacturing process is simplified. The structure reduces contact resistance between the graphene layers and the conductive layer, increases adhesion between the contact structure and the graphene layer, increases adhesion of metal particles to the substrate, and improves reliability of the device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing an interconnect structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a structure of an interconnect structure including a graphene-metal barrier. 100Interconnect structure 110Substrate 130Graphene-metal barrier 131Graphene layer 132Metal particle