• 专利标题:   Manufacture of bottom contact type FET, involves forming electrode on substrate as source and drain, coating graphene dispersion on substrate, absorbing oxide in interval between source and drain, and reducing absorbed graphene oxide.
  • 专利号:   KR2012086621-A, KR1190219-B1
  • 发明人:   LEE H Y, LEE J H, SEO S H
  • 专利权人:   UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   H01L021/335, H01L029/778
  • 专利详细信息:   KR2012086621-A 03 Aug 2012 H01L-021/335 201259 Pages: 27
  • 申请详细信息:   KR2012086621-A KR007980 26 Jan 2011
  • 优先权号:   KR007980

▎ 摘  要

NOVELTY - An electrode is formed on a substrate to function as a source electrode and a drain electrode. A graphene dispersion solution is coated on the substrate and graphene oxide is absorbed in the interval between source electrode and drain electrode. The absorbed graphene oxide is reduced, to obtain a bottom surface contact type FET. USE - Manufacture of bottom surface contact type FET (claimed).