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  • 专利标题:   Graphene crystal growth controlling carrier comprises high-temperature carrier with cover with hole, boxes with opening, flat bottom wall and chemical vapor deposition tube furnace quartz tube, and flat metal substrate for growing graphene.
  • 专利号:   CN105523548-A, CN105523548-B
  • 发明人:   GAO X, JIANG H, LI Z, SHI H
  • 专利权人:   CHINESE ACAD SCI CHONGQING GREEN INTEL
  • 国际专利分类:   C01B031/04, C01B032/184
  • 专利详细信息:   CN105523548-A 27 Apr 2016 C01B-031/04 201649 Pages: 10 English
  • 申请详细信息:   CN105523548-A CN10057022 28 Jan 2016
  • 优先权号:   CN10057022

▎ 摘　　要

NOVELTY - A graphene crystal growth controlling carrier comprises high-temperature carrier with cover (1) with hole (4), boxes with opening and flat bottom wall, and flat metal substrate (2) for growing graphene. The box also includes chemical vapor deposition tube furnace quartz tube. USE - Graphene crystal growth controlling carrier. ADVANTAGE - The carrier controls nucleate area and nucleate density of copper foil. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of graphene crystal growth controlling carrier. Cover (1) Flat metal substrate (2) Base (3) Hole (4) Gas stream (5)