• 专利标题:   On-chip miniature field-assisted thermal emission electron source comprises insulating spacer layer that is provided with second groove for exposing electron emitter, and field enhanced electrode that is mounted on insulating layer.
  • 专利号:   CN113555263-A, CN113555263-B
  • 发明人:   WANG Y, WEI X
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   H01J009/04, H01J003/02
  • 专利详细信息:   CN113555263-A 26 Oct 2021 H01J-003/02 202104 Chinese
  • 申请详细信息:   CN113555263-A CN10330997 24 Apr 2020
  • 优先权号:   CN10330997

▎ 摘  要

NOVELTY - On-chip miniature field-assisted thermal emission electron source comprises substrate formed with first groove. A pair of electrode pairs is arranged on substrate 1. An electron emitter is arranged between each group of electrode pairs. An insulating spacer layer 5 is arranged above the first groove, and covers the electrode pair and the electronemitter. The insulating layer is provided with a second groove 6. The second groove exposes the electrode emitter, and a field-enhanced electrode 7 is set on the insulating baffle layer. The substrate is formed as a copper-plated structure. USE - On-chip miniature field-assisted thermal emission electron source. ADVANTAGE - The on-chip miniature field-assisted thermal emission electron source integrates the field enhanced electrode close to the electron emitter by introducing a strong electric field to reduce a surface barrier of the emitter to improve emitting efficiency of the electron emitter, reduces power consumption of the hot electron source, so that the source is easy to integrate and manufacturing cost of the source. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing on-chip miniature field-assisted thermal emission electron source, which involves: a. providing substrate; b. forming electron emitter on predetermined position of substrate, set of electrode pairs connected to the electron emitters is formed on substrate, number of electrode pairs is same as number of electron emitters, and each group of electrode pairs is connected to one corresponding electrode pair; c. forming insulating spacer layer on substrate; d. forming field-enhancing electrode at preset position of insulating spacer layer; e. etching insulating spacer layer to form second groove, and second groove is used to expose electron emitter, etching substrate through second groove to form first groove, and suspending electron emitter above first groove. DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of on-chip miniature field-assisted thermal emission electron source. Substrate (1) Insulating spacer layer (5) Second groove (6) Field-enhanced electrode (7) Heat sink (8)