• 专利标题:   Single photon detector based on graphene quantum dot, has coulomb island coupled to source and drain in form of tunnel junctions, and that is coupled to side gate, back gate and graphene electrostatic meters in form of capacitors.
  • 专利号:   CN206349380-U
  • 发明人:   FANG J, QIAO S, WANG F, ZHANG X, QIN H, CHANG S, QIN S
  • 专利权人:   UNIV NAT DEFENSE TECHNOLOGY
  • 国际专利分类:   G01J011/00, H01L031/113, H01L031/18
  • 专利详细信息:   CN206349380-U 21 Jul 2017 H01L-031/113 201754 Pages: 15 Chinese
  • 申请详细信息:   CN206349380-U CN21134980 19 Oct 2016
  • 优先权号:   CN21134980

▎ 摘  要

NOVELTY - A THz single photon detector based on graphene quantum dot, which adopts the basic structure of graphene quantum dot or series graphene double quantum dot with nano graphene strip electrometer is coupled to the silicon substrate, a source, a drain, a side gate, the back gate, coulomb island, an electrometer and protective layer is the basic unit, the source electrode, drain electrode, side gate, coulomb island and an electrometer is integrated on the surface of the silicon substrate to form silicon dioxide on the substrate, the back gate is set on the silicon substrate on the silicon substrate. and the graphene quantum dot or series graphene quantum dot as coulomb island of THz single photon detector, coulomb island is located between source, drain and gate, near coulomb island is integrated with one graphene nanometre belt as graphene electrometer, coulomb island and source electrode and drain electrode in the form of a tunnel junction are coupled, coulomb island and the gate, and the back gate electrode and the graphene electrometer in the form of capacitive for coupling. The utility model overcomes the defect that the existing single-photon detector preparation technique difficulty and sensitivity is low.