• 专利标题:   Method for preparing flexible graphene/germanium heterogeneous junction used in semiconductor material preparation, by using germanium as target, copper foil graphene as the substrate, and laser as particle excitation source, and depositing germanium thin films on copper foil graphene by PLD method.
  • 专利号:   CN115881839-A
  • 发明人:   LIN S, HU J, ZANG Y, CAO D, SONG L, XIA C, ZHANG G, LI Z, WANG R, GONG J, DING B, LI L
  • 专利权人:   UNIV XIAN POLYTECHNIC
  • 国际专利分类:   C23C014/18, C23C014/28, H01L031/028, H01L031/109, H01L031/18
  • 专利详细信息:   CN115881839-A 31 Mar 2023 H01L-031/028 202334 Chinese
  • 申请详细信息:   CN115881839-A CN11473690 22 Nov 2022
  • 优先权号:   CN11473690

▎ 摘  要

NOVELTY - The method comprises using germanium as the target, copper foil graphene as the substrate, and laser as the particle excitation source, and depositing germanium thin films on the copper foil graphene by PLD method. USE - Method for preparing flexible graphene/germanium heterogeneous junction, which is used in photodiode detector used in silicon-based photonics. Can also be used in the field of semiconductor material preparation. ADVANTAGE - The preparation method and transfer method solves the problem that the graphene detector has low photoresponsivity due to the low light absorption rate of graphene, due to the short lifetime of photogenerated carriers in graphene itself, and provides graphene-based heterojunctions with high near-infrared response and high speed. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for transfer method of flexible graphene/germanium heterogeneous junction. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating the method for preparing flexible graphene/germanium heterogeneous junction (Drawing includes non-English language text).