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  • 专利标题:   Formation of film involves preparing substrate containing conductive film formed on base substrate, forming composite layer containing graphene layer, and electrically connecting conductive film with former film through composite layer.
  • 专利号:   WO2021132010-A1, JP2021567358-X, KR2022113782-A, US2023028816-A1, JP7279200-B2
  • 发明人:   NI Z, MATSUMOTO T, IFUKU R, YOU W
  • 专利权人:   TOKYO ELECTRON LTD, TOKYO ELECTRON LTD, TOKYO ELECTRON LTD
  • 国际专利分类:   C23C014/14, C23C014/22, C23C014/34, C23C016/26, H01L021/28, H01L021/285, H01L021/768, C23C014/18, H01J037/32, H01L021/67, H01L021/3205, H01L023/532
  • 专利详细信息:   WO2021132010-A1 01 Jul 2021 202165 Pages: 44 Japanese
  • 申请详细信息:   WO2021132010-A1 WOJP047124 17 Dec 2020
  • 优先权号:   JP233149, KR723927

▎ 摘　　要

NOVELTY - Formation of film involves preparing (S1) a substrate containing the conductive film (A1) formed on the base substrate, forming (S2) a composite layer containing graphene layers and a transition metal of period 4-6 (excluding lanthanoid) as a dopant atom, provided between the graphene layers, on the conductive film (A1), and electrically connecting (S3) a conductive film (A2) which is formed on the composite layer, to the conductive film (A1) through the composite layer. USE - Formation of film. ADVANTAGE - The method enables formation of film with improved longitudinal electrical conductivity of the composite layer containing graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for film forming system. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of formation of film. Preparing a substrate (S1) Forming a conductive layer (S2) Electrically connecting conductive films (S3)