▎ 摘　　要

NOVELTY - Method for growing flat graphene with a uniform layer thickness, comprises pyrolyzing the silicon carbide on a silicon carbide wafer under ultra-high vacuum conditions by controlling the temperature of the silicon carbide wafer, and pyrolyzing the silicon carbide in a nitrogen plasma atmosphere to grow a graphene film. USE - The method is useful for growing flat graphene with uniform layer thickness. ADVANTAGE - The method is precise. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for single-layer or double-layer graphene film obtained by the method of growing a flat graphene with a uniform layer thickness.