▎ 摘　　要

NOVELTY - The utility model claims a silicon-based light emitting diode, relating to the semiconductor photoelectric technical field, comprising a silicon substrate, the silicon-based light emitting diode further comprises: sequentially buffer layer laminated on the silicon substrate, an N-type semiconductor layer, a light emitting layer, an electron blocking layer, a P-type semiconductor layer and contact layer; wherein the buffer layer sequentially a graphene layer, a first AlN layer, a SiN layer and a second AlN layer, the graphene layer is set on the silicon substrate, the first AlN layer is an AlN layer grown at low temperature, the second AlN layer is an AlN layer growing at high temperature. The utility model can solve the problem that there is large lattice mismatch and thermal mismatch between the silicon substrate and the gallium nitride epitaxial layer in the prior art, causing the gallium nitride epitaxial layer to generate a lot of defects and dislocation.