▎ 摘　　要

NOVELTY - The photodetector has a bottom gate electrode (1), a dielectric layer (2), graphene (3), an electron extraction layer (5) and a ternary heterojunction hybrid film (6) arranged in sequence from bottom to top. The near-infrared transistor photodetector includes metal electrodes (4) on both ends of the electron extraction layer on the graphene. The ternary heterojunction mixed film is a donor material, a non-fullerene acceptor material, and a fullerene and its derivative acceptor material in a mass ratio of 1:(1-2):(0.1-0.8) mixture. The non-fullerene acceptor material is a narrow band gap material with a band gap not higher than 1.2 eV. USE - Ultra-high sensitivity near-infrared transistor photodetector. ADVANTAGE - The absorption spectra of the three materials of the ternary heterojunction mixed film are complementary, which broadens the detection band of the detector, and the cascade energy level structure improves carrier transmission. The loss of photogenerated electrons by non-radiative transitions is reduced, by providing an electron extraction layer. The photodetector prolongs the life of photogenerated electrons, enhances the light response current gain and sensitivity, and realizes the detection of extremely weak near-infrared light signals. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of ultra-high sensitivity near-infrared transistor photodetector. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the structure of the ultra-high sensitivity near-infrared transistor photodetector. Bottom gate electrode (1) Dielectric layer (2) Graphene (3) Metal electrode (4) Electron extraction layer (5) Ternary heterojunction hybrid film (6)