• 专利标题:   Preparing double-halogen atom doped graphene, involves washing solution after electrochemical peeling, ultrasonic and allowing to stand, freezing and drying upper layer clear liquid.
  • 专利号:   CN115367742-A
  • 发明人:   LIU H, LIU B, XU C
  • 专利权人:   UNIV JINAN
  • 国际专利分类:   C01B032/19
  • 专利详细信息:   CN115367742-A 22 Nov 2022 C01B-032/19 202304 Chinese
  • 申请详细信息:   CN115367742-A CN10184665 28 Feb 2022
  • 优先权号:   CN10184665

▎ 摘  要

NOVELTY - Preparing double-halogen atom doped graphene involves using graphite material as a working electrode and platinum as a counter electrode, mixing sulfuric acid and halogen ammonium salt in a mixed solution, peeling the graphite materials using constant voltage technology, washing the solution after electrochemical peeling, ultrasonic and allowing to stand, freezing and drying the upper layer clear liquid to obtain a dual-halon-doped graphene. USE - The method is useful for preparing double-halogen atom doped graphene, which is useful in electronic applications. ADVANTAGE - The method uses green simple and mild condition to prepare high quality of double-halogen atom doped graphene avoids the use of dangerous reagent in the traditional heteroatomic doped graphite method, the preparation cost is low, the technique is simple, it can realize fast, direct, and high-efficiency preparation, has expandability, convenient for mass production, and the product has rich pore and structure defect, large edge size, which is good for obtaining more excellent performance, is fast, directly, high yield, low raw material cost, and has good universality, halogen atom doping type and content can be adjusted and controllable.