▎ 摘　　要

NOVELTY - The method involves forming an electrically conductive structure (108) over a bottom electrode (16) formed on base (14). A dielectric material (104) is formed along a sidewall of electrically conductive structure such that a portion of bottom electrode is covered and while other portion of bottom electrode is exposed. Another electrically conductive structure (110) is formed on a graphene structure electrically coupled with the exposed portion of bottom electrode. A top electrode (18) is electrically coupled with electrically conductive structures. USE - Method of forming switch e.g. graphene-containing switch for use as select device in memory device e.g. memory array. ADVANTAGE - The switches can be formed effectively so as to utilize as select devices in memory devices. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view explaining the process for forming switch. Base (14) Bottom electrode (16) Top electrode (18) Dielectric materials (102,104,124) Electrically conductive structures (108,110)