• 专利标题:   Forming graphene device involves providing a glass substrate with blocking layer set to form stack and first electrode and second electrode, increasing temperature of stack and applying an external electric potential to first electrode.
  • 专利号:   WO2020081306-A1
  • 发明人:   MARCHENA MARTINFRANCES M, MAZUMDER P, PRUNERI V
  • 专利权人:   CORNING INC, PHOTONIC SCI INST
  • 国际专利分类:   B82Y030/00, C01B032/194, C03C021/00, C03C023/00, G02F001/355, H01L031/0392
  • 专利详细信息:   WO2020081306-A1 23 Apr 2020 C01B-032/194 202038 Pages: 32 English
  • 申请详细信息:   WO2020081306-A1 WOUS055288 09 Oct 2019
  • 优先权号:   US747219P

▎ 摘  要

NOVELTY - Forming graphene device involves providing a glass substrate with a blocking layer set to form a stack and a first electrode and a second electrode; increasing the temperature of the stack to l00 degrees C; applying an external electric potential (Vp2) to the first electrode such that one metal ion of the glass substrate migrates toward the first electrode to create a depletion region in the glass substrate adjacent the second electrode at a potential (VPI); decreasing the temperature of the stack to room temperature while applying the external electric potential; and after reaching room temperature, setting the external electric potential to zero to create a frozen voltage region adjacent the second electrode. USE - Method for forming graphene device. ADVANTAGE - The method enables to form graphene device, which ensures graphene doping by thermal poling.