▎ 摘　　要

NOVELTY - The method for preparing graphene material, involves taking copper foil, placing copper foil in center of 1-inch quartz tube, vacuuming chemical vapor deposition (CVD) system for half an hour to reduce chamber pressure, turning on hydrogen flowmeter, heating, introducing hydrogen gas to reduce oxide layer on copper surface, and introducing methane gas, setting composition of methane and hydrogen, reacting, stop feeding methane and hydrogen, cooling furnace tube, taking out sample, and transferring graphene from copper foil to insulating substrate, by coating a layer of poly(methyl methacrylate) on surface of copper foil on which graphene is grown, and transferring sample to copper etching solution, etching away copper, transferring graphene film protected by poly(methyl methacrylate) to target substrate, and removing poly(methyl methacrylate) with acetone. USE - Method for preparing graphene material used in graphene-based micro-nano electronic device research. ADVANTAGE - The method improves the precision of graphene preparation, improves the quality of graphene, accelerates the scale commercial application, saves cost, and avoids the transfer process which cause pollution to graphene and cause lattice defect problem, and the CVD instrument ensures high flexibility in the preparation of graphene films, thereby providing high-quality graphene films by adjusting various parameters. DETAILED DESCRIPTION - The method for preparing graphene material, involves taking copper foil with thickness of 25 mum, placing copper foil in the center of 1-inch quartz tube, which is close to heater to ensure that actual heating temperature is consistent with set temperature, vacuuming chemical vapor deposition (CVD) system for half an hour to reduce chamber pressure to about 1.1x10-2 Torr, turning on hydrogen flowmeter and setting to 35 sccm, increasing the temperature to 1000degreesC and heat-preserving at 1000degreesC for 30 minutes, introducing hydrogen gas to reduce oxide layer on copper surface, and introducing methane gas, setting composition of methane and hydrogen at mass ratio of 15:25 sccm, reacting for 30 minutes, stop feeding methane and hydrogen, cooling furnace tube to room temperature, taking out the sample, and transferring graphene from copper foil to insulating substrate, by coating a layer of poly(methyl methacrylate) on the surface of copper foil on which graphene is grown, and transferring sample to copper etching solution, etching away copper, transferring graphene film protected by poly(methyl methacrylate) to target substrate, and removing poly(methyl methacrylate) with acetone.