▎ 摘　　要

NOVELTY - Manufacturing graphene wrinkles using three-dimensional structure patterning process comprises (i) preparing transition metal thin film and performing a photo process on the surface of the transition metal thin film to form a mask pattern divided into a protective area covered with photoresist and an open area open from the photoresist; (ii) performing an etching process on the transition metal thin film to form a three-dimensional pattern in which the open region is etched and the protective region is not etched; (iii) inserting the transition metal thin film into a chemical vapor deposition (CVD) chamber to synthesize graphene on the three-dimensional pattern of the transition metal thin film; and (iv) transferring the synthesized graphene onto a stretchable or flexible substrate so that the degree of wrinkles of the transferred graphene in the regions corresponding to the protection region and the open region are different from each other. USE - The method is useful for manufacturing graphene wrinkles using three-dimensional structure patterning process. ADVANTAGE - The method improves conductivity characteristics by preventing lowering conductivity when applied to wearable electronic devices that require flexible or stretchable driving conditions. The graphene exhibits good conductivity due to its quantum mechanical structural characteristics, is flexible and stretchable with excellent mechanical properties.