▎ 摘　　要

NOVELTY - The FET has a graphene channel layer (2) formed on a substrate gate. A source electrode (3) and a drain electrode (4) are respectively located at two ends of the graphene channel layer. A gate dielectric layer (5) and a gate electrode (6) are located on the graphene channel layer between the source electrode and the drain electrode. A substrate (1) includes a support unit provided with recess portions (101) and projection portions (102). The projection portions come into contact with the graphene channel layer. USE - Graphene FET. ADVANTAGE - The graphene channel layer is physically supported by the support unit on the substrate, thus preventing collapse or deformation of the graphene channel layer due to the action of gravity in case of hanging same in the air without support and reducing contact area between the substrate and the graphene channel layer, reducing influence of the substrate on the graphene channel layer and increasing carrier mobility. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene FET. Substrate (1) Graphene channel layer (2) Source electrode (3) Drain electrode (4) Gate dielectric layer (5) Gate electrode (6) Recess portions (101) Projection portions (102)