▎ 摘　　要

NOVELTY - A crystalline silicon carbide surface is oxidized and silicon dioxide film is formed on surface layer. The carbon atom is segregated to interface of silicon dioxide film and silicon carbide crystal, by surface oxidation process. The silicon dioxide film is removed by oxide-film removal process, and the carbon atom remains segregated to interface. Heat treatment is performed at temperature below which large amount of silicon sublimations does not generate under vacuum, and carbon atoms are in excessive state, to form graphene layer(s) on the surface of silicon carbide. USE - Low-temperature formation of graphene on surface of silica carbide. Uses include but are not limited to semiconductors, electronics field, bio and medical field and nanotechnology field. ADVANTAGE - The method efficiently provides graphene having high quality and suppressed structural defect, by simple process without generating sublimation of silicon atom. DETAILED DESCRIPTION - A crystalline silicon carbide surface is oxidized in room temperature vicinity and silicon dioxide film is formed on surface layer. The carbon atom is segregated to interface of silicon dioxide film and silicon carbide crystal, by surface oxidation process. The silicon dioxide film is removed by oxide-film removal process performed at room temperature vicinity, and the carbon atom remains segregated to interface. Heat treatment is performed for silicon carbide surface, at temperature below which large amount of silicon sublimations does not generate under vacuum, and carbon atoms are in excessive state, to form graphene layer(s) on the surface of silicon carbide. DESCRIPTION OF DRAWING(S) - The drawing shows schematic view explaining low-temperature formation of graphene on surface of silicon carbide. Carbon atom (1) Silicon atom (2) Silicon carbide surface (3) Silicon dioxide film (4) Graphene (6)