▎ 摘　　要

NOVELTY - Preparing silicon/silicon carbide/graphene material involves pre-treating a single crystal silicon substrate into a substrate holder of a cold wall type laser chemical vapor deposition reactor, and vacuuming to a vacuum of 10 pascal or less, and passing an appropriate amount of diluent gas into the cold wall type laser chemical vapor deposition reactor. The carbon-containing precursor is introduced into the cold-wall type laser chemical vapor deposition reactor, and the degree of vacuum in the cold-wall type laser chemical vapor deposition reactor is adjusted to 10-104 pascal. The continuous laser is loaded to illuminate the surface of the single crystal silicon substrate, and the temperature of the single crystal silicon substrate is raised to a set preparation temperature of the cubic silicon carbide film. The temperature of the single crystal silicon substrate is kept stable, and continued to load continuously laser. USE - Method for preparing silicon/silicon carbide/graphene material. ADVANTAGE - The method enables to prepare silicon/silicon carbide/graphene material that improves the growth rate of the activity of reactants and membrane, and reduces the safety hazards associated with the use of silicon-containing precursors. DETAILED DESCRIPTION - Preparing a silicon/silicon carbide/graphene material involves pre-treating a single crystal silicon substrate into a substrate holder of a cold wall type laser chemical vapor deposition reactor, and vacuuming to a vacuum of 10 pascal or less, and passing an appropriate amount of diluent gas into the cold wall type laser chemical vapor deposition reactor. The carbon-containing precursor is introduced into the cold-wall type laser chemical vapor deposition reactor, and the degree of vacuum in the cold-wall type laser chemical vapor deposition reactor is adjusted to 10-104 pascal. The continuous laser is loaded to illuminate the surface of the single crystal silicon substrate, and the temperature of the single crystal silicon substrate is raised to a set preparation temperature of the cubic silicon carbide film. The temperature of the single crystal silicon substrate is kept stable, and continued to load continuously laser. The degree of vacuum is adjusted in the cold-wall type laser chemical vapor deposition reactor to 10 pascal or less, turned off the continuous laser, stopped introduction of the carbon-containing precursor and the diluent gas, and then cooled to room temperature which is cubic silicon carbide film grown on the single crystal silicon substrate. The vacuum degree is maintained in the cold-wall type laser chemical vapor deposition reactor to be 10 Pascal or less, loaded continuous laser to irradiate the surface of the cubic silicon carbide film. The heating temperature is adjusted to the set preparation temperature of the graphene, and then kept the temperature stable, and continued to load continuous laser. The continuous laser is turned off, and then cooled to room temperature to obtain silicon/silicon carbide/graphene material.