▎ 摘　　要

NOVELTY - Preparing metal nanoparticle comprises (a) placing boron powder in a cleaned crucible, placing into a vacuum chamber for degassing, (b) placing the metal in the cleaned crucible, placing into the vacuum chamber for degassing, (c) placing a single crystal metal sheet (e.g. gold single wafer, a silver single wafer or a copper single wafer) substrate in a vacuum, annealing by vacuum argon ion bombardment sputtering, repeating the processing method of this operation to produce an atomically flat surface, (d) growing a single layer of boron on the substrate using molecular beam epitaxy method in vacuum and (e) depositing the metal on a boron-coated substrate by vacuum heating the metal in a crucible and forming a metal dispersion. USE - The method is useful for preparing metal nanoparticle. ADVANTAGE - The method has good controllable dispersion effect on gold, cobalt and iron; arranges the size of nano-particles in the scale range of high catalytic activity; directly uses nano-particles to carry out chemical vapor deposition controllable growth and grows ordered non-metallic nanostructures on the surface of boro-graphene and realize in-situ direct docking of semiconductor processing. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a metal nanoparticle supported on the borophene, which is obtained by the above method.