▎ 摘　　要

NOVELTY - Manufacturing nitrogen-plane nitride semiconductor device involves growing gallium nitride buffer layer on substrate, and forming separation layer on buffer layer; forming high electron mobility transistor (HEMT) structure by stacking set of heterojunction layers have gallium plane polarity on separation layer, and passivation layer is deposited on HEMT structure; bonding support substrate on structure, and seperating structure from layer to form source, drain and gate; providing structure with separated nitrogen surface polarity to fabricate nitrogen surface of structure. USE - Method for manufacturing nitrogen-plane nitride semiconductor device. ADVANTAGE - The method helps in improving heat dissipation performance of device, minimizes leakage current, where breakdown voltage (BV) improvement effect is obtained and reduces size of nitride semiconductor device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a nitrogen plane nitride semiconductor device, which is manufactured by above method.