▎ 摘　　要

NOVELTY - The device has active patterns (AP1, AP2) spaced apart from each other on a substrate (100). Transistors comprise the active patterns with a buffer pattern (102) provided on the substrate. A channel pattern (108) is provided on the buffer pattern. A doped pattern (104a) is formed between the buffer pattern and the channel pattern. Another buffer pattern is formed between the doped pattern and the channel pattern, where the doped pattern comprises graphene injected with an impurity. The doped pattern provides extra carriers to the channel pattern. USE - Semiconductor device e.g. dynamic RAM device and fast static RAM device, for use in an electronic system utilized in an electronic product. Uses include but are not limited to personal digital assistant, portable computer, web tablet, wireless phone, mobile phone, digital music player and memory card. ADVANTAGE - The device improves operating characteristics and reliability in an effective manner. The device provides semiconductor components that are formed of a same channel material in an easy manner. The device improves electrical conductivity in a channel, thus improving performance of the device and enhancing characteristic dispersion of an associated transistor. The device increases electrical conductivity of the channel pattern to improve the operating characteristic of a FET in an effective manner. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a semiconductor device. Active patterns (AP1, AP2) Substrate (100) Buffer patterns (102, 106) Doped patterns (104a, 104b) Channel pattern (108)