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  • 专利标题:   Manufacture of monocrystalline graphene involves forming high-temperature portion on substrate with metal thin film using high-heat generating device, supplying carbon source, and contacting carbon source with high-temperature portion.
  • 专利号:   KR2015037404-A
  • 发明人:   OH E, LEE D, LEE S, JANG H
  • 专利权人:   LG CHEM LTD
  • 国际专利分类:   C01B031/02, C30B029/36
  • 专利详细信息:   KR2015037404-A 08 Apr 2015 201528 Pages: 8
  • 申请详细信息:   KR2015037404-A KR116952 30 Sep 2013
  • 优先权号:   KR116952

▎ 摘　　要

NOVELTY - Manufacture of monocrystalline graphene involves forming high-temperature portion on a substrate with metal thin film at 900-1200 degrees C using a high heat generating device, supplying carbon source, and contacting the carbon source with the high-temperature portion. USE - Manufacture of monocrystalline graphene (claimed).