▎ 摘　　要

NOVELTY - Method for high-quality, rapid, large-area preparation of vertical graphene films, comprises (i) passing one end of the rolled substrate through the reaction chamber and fixing on the rotating shaft, and sealing the rolled substrate together with the reaction chamber and the rotating shaft as a whole, (ii) vacuuming the reaction chamber, and passing more than one auxiliary gases required for the reaction into the reaction chamber, (iii) running temperature control program to increase the temperature in the secondary temperature zone to 600-900 degrees C, and the temperature in the high-temperature zone to 700-1100 degrees C, (iv) adjusting proportion of auxiliary gas to stabilize the pressure in the reaction chamber, turning on the plasma, turning on the rotation to move the substrate under the action of the rotation and winding of the rotating shaft to form vertical graphene on the dynamic substrate, and (v) reacting, turning off the plasma source and cooling down with the furnace. USE - The method is useful for high-quality, rapid, large-area preparation of vertical graphene films. ADVANTAGE - The method improves the production efficiency of vertical graphene, the synthesized vertical graphene has dense and uniform defects, and has a broad prospect in the field of catalysis. DETAILED DESCRIPTION - Method for high-quality, rapid, large-area preparation of vertical graphene films, comprises (i) passing one end of the rolled substrate through the reaction chamber and fixing on the rotating shaft, and sealing the rolled substrate together with the reaction chamber and the rotating shaft as a whole, where the reaction chamber includes a sub-temperature zone and multiple high-temperature zones, (ii) vacuuming the reaction chamber, and passing more than one auxiliary gases required for the reaction into the reaction chamber, (iii) running the temperature control program to increase the temperature in the secondary temperature zone to 600-900 degrees C, and the temperature in the high-temperature zone to 700-1100 degrees C, (iv) when the temperature in the secondary temperature zone rises to 200 degrees C and above, adjusting the proportion of auxiliary gas to stabilize the pressure in the reaction chamber, when the temperature of the secondary temperature zone rises to the target temperature of step (iii), turning on the plasma, turning on the rotation to move the substrate under the action of the rotation and winding of the rotating shaft to form vertical graphene on the dynamic substrate, and (v) reacting, turning off the plasma source and cooling down with the furnace. An INDEPENDENT CLAIM is also included for vertical graphene films obtained by the method as mentioned above.