▎ 摘　　要

NOVELTY - The electron source (2) comprises a substrate (5) of the cathode (1), which includes silicon carbide. The cathode includes a graphene layer (6), which is grown epitaxially with the silicon carbide of the substrate. The electron source has an anode, which has a graphene layer (12). The anode (4) is arranged on a substrate, which includes silicon carbide. The cathode and the anode are arranged on the same substrate. The anode includes a second substrate. The graphene layer of the cathode is arranged in such a way that electrons are emitted at an edge (3) of the graphene layer of the cathode in order to be accelerated towards the anode. USE - Electron source for generating an electron beam with a cathode and an anode in the form of graphene layer. ADVANTAGE - Silicon carbide has good high voltage strength. The processes for manufacturing silicon carbide on an industrial scale are available. The silicon carbide can be achieved with electrical potential differences of a some kilovolts as required for an electron source. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for generating an electron beam. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of electron source for generating an electron beam with a cathode. Cathode (1) Electron source (2) Edge (3) Anode (4) Substrate (5) Graphene layer (6) Graphene layer (12)