▎ 摘　　要

NOVELTY - The device has a heat absorbing layer formed on a first aluminum alloy plate. A radiating layer is formed on a second aluminum alloy plate. A first metal logic circuit layer is formed on the heat absorbing layer, where the heat absorbing layer is an aluminum oxide heat absorbing layer, and the radiating layer is an aluminum nitride radiating layer or a graphene radiating layer. A second metal logic circuit layer is formed on the radiating layer. A P-type semiconductor and an N-type semiconductor are alternately arranged with each other. The first metal logic circuit layer and the second metal logic circuit layer are fixed with each other, where heat conduction coefficient of the heat dissipation layer is greater than heat conduction coefficient of the heat absorption layer. USE - Thermoelectric temperature difference generating device. ADVANTAGE - The device realizes the heat conduction coefficient of the radiating layer is greater than the heat conduction coefficient of the heat absorbing layer, so as to improve the power generation efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a thermoelectric temperature difference generating device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a front schematic view of a thermoelectric temperature difference generating device.