▎ 摘　　要

NOVELTY - Production of structure involves contacting at least one surface of a substrate having a temperature of -196 to 3000° C with precursor (3) in a gaseous or atomic-molecular excited state, and depositing a structure containing borophene, and/or boron-heteroatom-domain comprising a two-dimensional (2D) boron network, and/or a structure of 2D-network containing a multitude of boron-containing clusters comprising boron-boron (B-B) bonds and connecting at least one of the boron containing clusters comprising B-B bonds may comprise at least one heteroatom, and the multitude of boron-containing clusters comprising B-B bonds by B-B bonds or B-heteroatom bonds, preferably connecting one boron-containing cluster comprises 3-20 boron atoms, and/or a structure of 2D-network containing a multitude of boron-heteroatom clusters having B-heteroatom bonds, and the multitude of boron-heteroatom clusters having B-heteroatom bonds by B-B bonds on at least one surface of the substrate. USE - Production of structure e.g. borophene-based structure used for forming products (claimed) such as boranes, borazine, graphene, perylene 3,4,9, 10-tetracarboxylic dianhydride, and transition metal dichalcogenides such as molybdenum disulfide, tungsten disulfide, molybdenum diselenide, tungsten diselenide, molybdenum ditelluride etc. ADVANTAGE - The method provides high purity products with high borophene domains in reduced size. DETAILED DESCRIPTION - Production of structure involves contacting at least one surface of a substrate having a temperature of -196 to 3000° C with at least one precursor in a gaseous or atomic-molecular excited state, and depositing a structure containing at least one borophene, and/or at least one boron-heteroatom-domain comprising a two-dimensional (2D) boron network, and/or a structure of 2D-network containing a multitude of boron-containing clusters comprising boron-boron (B-B) bonds and connecting at least one of the boron containing clusters comprising B-B bonds may comprise at least one heteroatom, and the multitude of boron-containing clusters comprising B-B bonds by B-B bonds or B-heteroatom bonds, preferably connecting one boron-containing cluster comprises 3-20 boron atoms, and/or a structure of 2D-network containing a multitude of boron-heteroatom clusters having B-heteroatom bonds, and the multitude of boron-heteroatom clusters having B-heteroatom bonds by B-B bonds on at least one surface of the substrate. The precursor in a gaseous or atomic-molecular excited state has a pressure of 1010mbar-10 bar. The precursor comprises at least one precursor chosen from optionally substituted boranes, optionally substituted heteroboranes, optionally substituted polyboranes, optionally substituted poly-boron-heteroatom compounds, substituted polyboron compounds, optionally substituted organoboron compounds, optionally substituted organopolyboron compounds, optionally substituted borazines, optionally substituted boroxines, and boron halides, and their adducts. An INDEPENDENT CLAIM is included for a product, which comprises the structure, and at least one homologous domain with a size of 100 nm or more, preferably micrometer-sized single-crystalline domains. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the lab scale setup for the production of structures. 1Precursor gas container 2Cold trap 3Precursor 4Growth chamber 5Pumping system