▎ 摘　　要

NOVELTY - The method for preparing a porous silicon carbide high-temperature heat-insulating tile, involves: mixing poly(N-vinylguanidine) (PVG) powder and silicon carbide-reduced graphene oxide (SiC(rGO)p) ceramic filler powder by ball milling, then drying and grinding, finally adding graphite powder pore-forming agent, and mixing uniformly to obtain SiC(rGO)p/PVG/carbon (C) mixed powder; pouring the SiC(rGO)p/PVG/C mixed powder into a mold, pressing it into a mold, puting it into a crucible lined with graphite paper after demolding, and cracking it again at high temperature in a tube furnace under the protection of an inert atmosphere to obtain SiC(rGO)/C ceramic sheet; putting the SiC(rGO)/C ceramic sheet in an air furnace to remove carbon and creating pores to obtain a porous silicon carbide high-temperature insulation tile material i.e. (SiC(rGO)x) porous ceramics, where x represents the mass fraction of the pore-forming agent added in the raw material system. USE - Method for preparing a porous silicon carbide high-temperature heat-insulating tile. ADVANTAGE - The method provides porous silicon carbide high-temperature insulating tile with low density, low thermal conductivity, high mechanical strength, high ceramic yield, low linear shrinkage, low heat conductivity and high temperature resistance and strong oxidation resistance, and realizes the heat insulation integration. The method is simple and economical preparation method suitable for industrial production. DETAILED DESCRIPTION - The method for preparing a porous silicon carbide high-temperature heat-insulating tile involves: mixing poly(N-vinylguanidine) (PVG) powder and silicon carbide-reduced graphene oxide (SiC(rGO)p) ceramic filler powder by ball milling, then drying and grinding, finally adding graphite powder pore-forming agent, and mixing uniformly to obtain SiC(rGO)p/PVG/carbon (C) mixed powder; pouring the SiC(rGO)p/PVG/C mixed powder into a mold, pressing it into a mold, puting it into a crucible lined with graphite paper after demolding, and cracking it again at high temperature in a tube furnace under the protection of an inert atmosphere to obtain SiC(rGO)/C ceramic sheet; putting the SiC(rGO)/C ceramic sheet in an air furnace to remove carbon and creating pores to obtain a porous silicon carbide high-temperature insulation tile material i.e. (SiC(rGO)x) porous ceramics, where x represents the mass fraction of the pore-forming agent added in the raw material system; and immersing the SiC(rGO)xporous ceramic in the silica sol solution, and then taking it out and cracking it at a high temperature under the protection of an inert atmosphere to obtain the repaired porous silicon carbide high-temperature insulation tile material i.e. SiC(rGO)x/silica porous ceramics, where x represents the mass fraction of the pore-forming agent added in the raw material system. An INDEPENDENT CLAIM is included for the porous silicon carbide high-temperature heat-insulation tile.