• 专利标题:   Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.
  • 专利号:   US2012282489-A1, KR2012125149-A, KR1993382-B1
  • 发明人:   SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   B32B009/00, B82Y030/00, B82Y040/00, C23C016/26, B01J021/06, C01B031/02, C01B031/10, H05B033/28, C01B032/336
  • 专利详细信息:   US2012282489-A1 08 Nov 2012 C23C-016/26 201275 Pages: 13 English
  • 申请详细信息:   US2012282489-A1 US465488 07 May 2012
  • 优先权号:   KR043074, KR126279

▎ 摘  要

NOVELTY - Preparing a crystalline graphene (12, 14), comprises: performing a first thermal treatment including supplying heat to an inorganic substrate (11) in a reactor; introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon; and binding the activated carbon on the inorganic substrate to grow the crystalline graphene. USE - The method is useful for preparing crystalline graphene, which is useful: in electronic device (all claimed); as a transparent electrode; in a solar cell; as a panel conducting thin layer of a display device; and as a channel for memory devices, sensors or electronic paper. ADVANTAGE - The method: provides the crystalline graphene, which exhibits high conductivity and uniformity of the graphene layer, and improved crystallinity; is capable of directly growing graphene on a target substrate without needing a separate transfer process, hence it is simple; and suppresses the damage of graphene. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) the crystalline graphene obtained by the method, where the crystalline graphene has a D-band to G-band peak intensity ratio of less than or equal to 0.5; (2) a graphene-on-substrate, comprising: the inorganic substrate; and the crystalline graphene disposed on at least one surface of the inorganic substrate, where the crystalline graphene is directly grown on the inorganic substrate by a growing process; and (3) an electronic device comprising the graphene-on-substrate. DESCRIPTION OF DRAWING(S) - The figure illustrates a schematic diagram of a method of directly growing graphene. Inorganic substrate (11) Crystalline graphene (12, 14) Graphitization catalyst layer (13)