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  • 专利标题:   Photoconductive UV detector comprises low resistance silicon layer, silicon dioxide insulating layer, nano-zinc oxide- reduced graphene oxide coating and aluminum electrode.
  • 专利号:   CN106601858-A, CN106601858-B
  • 发明人:   PAN X, LU Q, WANG W, YE Z
  • 专利权人:   UNIV ZHEJIANG
  • 国际专利分类:   H01L031/0328, H01L031/09, H01L031/18
  • 专利详细信息:   CN106601858-A 26 Apr 2017 H01L-031/09 201736 Pages: 7 Chinese
  • 申请详细信息:   CN106601858-A CN11046887 23 Nov 2016
  • 优先权号:   CN11046887

▎ 摘　　要

NOVELTY - A photoconductive UV detector comprises a low resistance silicon layer, a silicon dioxide insulating layer, a nano-zinc oxide-reduced graphene oxide coating and an aluminum electrode. USE - Photoconductive UV detector (claimed). ADVANTAGE - The photoconductive UV detector has high responsivity and sensitivity and simple structure and can be prepared in a simple and economical manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the method for preparing the photoconductive UV detector.